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| ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. SOT89 and SOT223 versions are also available. FEATURES * * * * * * * * * * * * High voltage Low on-resistance Fast switching speed Low gate drive Low threshold Complementary P-channel Type ZVP4525E6 SOT23-6 package SOT23-6 APPLICATIONS Earth Recall and dialling switches Electronic hook switches High Voltage Power MOSFET Drivers Telecom call routers Solid state relays Top View ORDERING INFORMATION DEVICE ZVN4525E6TA ZVN4525E6TC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units DEVICE MARKING * N52 ISSUE 1 - MARCH 2001 1 ZVN4525E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS =10V; TA=25C)(a) (V GS =10V; TA=70C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25C (a) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID ID I DM IS I SM PD T j :T stg LIMIT 250 40 230 183 1.44 1.1 1.44 1.1 8.8 -55 to +150 UNIT V V mA mA A A A W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 65 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal NB High Voltage Applications For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors. ISSUE 1 - MARCH 2001 2 ZVN4525E6 CHARACTERISTICS ISSUE 1 - MARCH 2001 3 ZVN4525E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) V (BR)DSS I DSS I GSS V GS(th) R DS(on) 0.8 250 285 35 1 1.4 5.6 5.9 6.4 0.3 0.475 500 100 1.8 8.5 9.0 9.5 V nA nA V S I D =1mA, V GS =0V V DS =250V, V GS =0V V GS =40V, V DS =0V I =1mA, V DS = V GS D SYMBOL MIN. TYP. MAX. UNI CONDITIONS. T V GS =10V, I D =500mA V GS =4.5V, I D =360mA V GS =2.4V, I D =20mA V DS =10V,I D =0.3A Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) g fs C iss C oss C rss 72 11 3.6 pF pF pF V DS =25 V, V GS =0V, f=1MHz t d(on) tr t d(off) tf Qg Q gs Q gd 1.25 1.70 11.40 3.5 2.6 0.2 0.5 3.65 0.28 0.70 ns ns ns ns nC nC nC V DS =25V,V GS =10V, I D =360mA(refer to test circuit) V DD =30V, I D =360mA R G =50, V qs =10V (refer to test circuit) V SD t rr Q rr 186 34 0.97 260 48 V ns nC T j =25C, I S =360mA, V GS =0V T j =25C, I F =360mA, di/dt= 100A/s (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - MARCH 2001 4 ZVN4525E6 TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2001 5 ZVN4525E6 CHARACTERISTICS ISSUE 1 - MARCH 2001 6 ZVN4525E6 CHARACTERISTICS Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit ISSUE 1 - MARCH 2001 7 ZVN4525E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS b e L2 E E1 e1 D a DATUM A C A A2 A1 DIM Millimetres Min A A1 A2 b C D E E1 L e e1 L 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF 0 Inches Min 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 0.037 REF 0.074 REF Max 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002 Max 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60 10 0 10 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c) Zetex plc 2000 www.zetex.com Ths publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - MARCH 2001 8 |
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